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| SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC4027 TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.2 9.70 -0.2 Adoption of MBIT process Fast switohing time +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 High voltage and large current capcity 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Total Power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC Icp PC Rating 180 160 6 1.5 2.5 1 15 150 -55 to +150 Unit V V V A A W W 3.80 www.kexin.com.cn 1 SMD Type 2SC4027 Electrical Characteristics Ta = 25 Parameter collector cutoff current emitter cutoff current DC current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Turn-OFF Time Symbol ICBO IEBO hFE fT cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg toff see specified Test Circuit Testconditons VCB=120V,IE=0 VEB=4V,IC=0 VCE=5V,IC=100mA VCE=5V,IC=10mA VCE=10V,IC=50mA VCB=10V,f=1MHz IC=50mA,IB=50mA IC=50mA,IB=50mA IC=10iA,IE=0 IC=1mA,RBE= IE=10iA,IC=0 180 160 6 100 80 Min Transistors Typ Max 1.0 1.0 400 Unit iA iA 120 12 0.13 0.85 0.45 1.2 MHz pF V V V V V 60 1.2 80 is is is Switching Time Test Cirouit hFE Classification Marking hFE R 100 to 120 S 140 to 280 T 200 to 400 2 www.kexin.com.cn |
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